Power Transistors
2SB942, 2SB942A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1267 and 2SD1267A
Unit: mm
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
s
Features
q
q
q
7.5±0.2
Solder Dip
4.0
14.0±0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB942
2SB942A
2SB942
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25˚C)
Ratings
–60
–80
–60
–80
–5
–8
–4
40
2
150
–55 to +150
Unit
V
emitter voltage 2SB942A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
16.7±0.3
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB942
2SB942A
2SB942
2SB942A
2SB942
2SB942A
(T
C
=25˚C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
I
C
= –4A, I
B1
= – 0.4A, I
B2
= 0.4A
Conditions
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –4A, I
B
= – 0.4A
V
CE
= –10V, I
C
= – 0.1A, f = 10MHz
30
0.2
0.5
0.2
–60
–80
70
15
–2
–1.5
V
V
MHz
µs
µs
µs
250
min
typ
max
–400
–400
–700
–700
–1
Unit
µA
µA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Note: Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the
rank classification.
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
