Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
For power amplification
10.0±0.3
1.5±0.1
8.5±0.2
6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
Complementary to 2SD1253 and 2SD1253A
s
Features
q
q
q
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
Ratings
–60
–80
–60
–80
–5
–8
–4
40
1.3
150
–55 to +150
Unit
V
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
5.08±0.5
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB930
2SB930A
2SB930
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
8.5±0.2
6.0±0.3
emitter voltage 2SB930A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
14.7±0.5
4.4±0.5
0 to 0.4
V
A
A
W
10.0±0.3
1.5
–0.4
4.4±0.5
2.0
0.8±0.1
2.54±0.3
R0.5
R0.5
1.1 max.
5.08±0.5
˚C
˚C
1
2
3
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB930
2SB930A
2SB930
2SB930A
2SB930
2SB930A
(T
C
=25˚C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
I
C
= –4A, I
B1
= – 0.4A, I
B2
= 0.4A
Conditions
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –4A, I
B
= – 0.4A
V
CE
= –10V, I
C
= – 0.1A, f = 1MHz
20
0.2
0.5
0.2
–60
–80
70
15
min
typ
1:Base
2:Collector
3:Emitter
N Type Package (DS)
max
–400
–400
–700
–700
–1
3.0
–0.2
+0.4
+0
Unit
µA
µA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
250
–2
–1.5
V
V
MHz
µs
µs
µs
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
