Power Transistors
P
C
— Ta
40
2SB929, 2SB929A
I
C
— V
CE
–6
T
C
=25˚C
–5
–10
V
CE
=–4V
I
C
— V
BE
Collector power dissipation P
C
(W)
35
30
25
20
15
10
5
(3)
0
0
20
40
Collector current I
C
(A)
I
B
=–100mA
–4
–80mA
–60mA
–3
–40mA
–30mA
–20mA
Collector current I
C
(A)
(1) T
C
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
–8
–6
25˚C
T
C
=100˚C
–4
–25˚C
(1)
–2
–1
(2)
0
60
80 100 120 140 160
0
–2
–16mA
–4
–6
–8
–12mA
–8mA
–4mA
–2
0
–10
–12
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=10
–30
–10
–3
–1
10000
h
FE
— I
C
10000
V
CE
=–4V
3000
1000
300
100
30
10
3
f
T
— I
C
V
CE
=–5V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
T
C
=100˚C
–25˚C
– 0.3
T
C
=100˚C
–25˚C
25˚C
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency f
T
(MHz)
–1
–3
–10
3000
–1
–3
–10
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
–10
I
CP
–3
I
C
10ms
–1
t=1ms
10
3
Non repetitive
pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
10
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
– 0.3
300ms
1
– 0.1
2SB929
– 0.03
2SB929A
10
–1
– 0.01
–1
–3
–10
–30
–100 –300 –1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
