Transistor
2SB0835
(2SB835)
Silicon PNP epitaxial planer type
For low-frequency output amplification
6.9±0.1
2.5±0.1
1.0
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
1.5
R
0.
7
●
1.0±0.1
0.85
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Ratings
–20
–18
–5
–2
–1
1
Unit
V
V
V
A
A
Collector to base voltage
3
2
1
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
2.5
2.5
Collector power dissipation
Junction temperature
Storage temperature
P
C*
T
j
W
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
150
˚C
˚C
T
stg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
■
Electrical Characteristics
Parameter
Collector cutoff current
(Ta=25˚C)
Symbol
ue
Conditions
min
typ
1.25±0.05
■
Absolute Maximum Ratings
(Ta=25˚C)
0.55±0.1
0.45±0.05
max
–1
in
I
CBO
I
CEO
V
CB
= –10V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
nt
is
Collector to base voltage
co
V
CE
= –18V, I
B
= 0
–10
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
–20
–18
–5
4.1±0.2
4.5±0.1
●
2.4±0.2 2.0±0.2 3.5±0.1
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
nc
Emitter to base voltage
e/
D
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
C
ob
Pl
Transition frequency
Collector output capacitance
ea
M
Base to emitter saturation voltage
ai
*
h
FE1
Rank classification
R
130 ~ 210
S
180 ~ 280
Note.) The Part number in the Parenthesis shows conventional part number.
Rank
h
FE1
208
pl d in
an c
se
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
Unit
µA
µA
V
V
V
V
CE
= –2V, I
C
= –0.5A
130
50
280
V
CE
= –2V, I
C
= –1.5A
I
C
= –1A, I
B
= –50mA
– 0.5
–1.2
V
V
I
C
= –500mA, I
B
= –50mA
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –6V, I
E
= 0, f = 1MHz
200
40
MHz
pF
■
Features
1.5 R0.9
R0.9
0.4
nt
en
a
1.0
PANASONIC [ PANASONIC SEMICONDUCTOR ]
