Transistor
P
C
— Ta
1.4
2SB766, 2SB766A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–1.50
Ta=25˚C
–1.25
I
B
=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(W)
1.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
1.0
Collector current I
C
(A)
–1.00
0.8
– 0.75
0.6
– 0.50
– 0.3
– 0.1
– 0.03
0.4
0.2
– 0.25
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
600
V
CE
=–10V
200
180
500
V
CB
=–10V
Ta=25˚C
f
T
— I
E
Base to emitter saturation voltage V
BE(sat)
(V)
Transition frequency f
T
(MHz)
–1
–3
–10
–30
–10
–3
25˚C
–1
75˚C
Ta=–25˚C
Forward current transfer ratio h
FE
160
140
120
100
80
60
40
20
400
Ta=75˚C
300
25˚C
200
–25˚C
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
100
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
50
Area of safe operation (ASO)
–10
I
E
=0
f=1MHz
Ta=25˚C
–3
I
CP
Single pulse
Ta=25˚C
Collector output capacitance C
ob
(pF)
45
40
35
30
25
20
15
10
5
0
–1
Collector current I
C
(A)
–1
I
C
t=10ms
t=1s
– 0.3
– 0.1
– 0.03
– 0.01
2SB766A
2SB766
– 0.003
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3
–3
–10
–30
–100
–1
–3
–10
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
