2SB1462J
P
C
T
a
150
I
C
I
B
−120
V
CE
= −10
V
T
a
=
25°C
−1
200
I
B
V
BE
V
CE
= −10
V
T
a
=
25°C
Collector power dissipation P
C
(mW)
125
−100
−1
000
Collector current I
C
(mA)
100
−80
75
−60
50
−40
25
−20
0
Base current I
B
(
µA
)
−800
−600
−400
−200
0
20
40
60
80 100 120 140 160
0
0
−60
−120 −180 −240 −300 −360
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
−1.2
Ambient temperature T
a
(
°C
)
Base current I
B
(
µA
)
Base-emitter voltage V
BE
(V)
I
C
V
BE
V
CE
= −10
V
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
=
10
360
T
a
=
75°C
25°C
h
FE
I
C
V
CE
= −10
V
−120
−1
T
a
=
75°C
25°C
−25°C
−80
Forward current transfer ratio h
FE
−100
300
Collector current I
C
(mA)
T
a
=
75°C
−25°C
240
−25°C
180
−60
−
0.1
−40
120
−
0.01
−20
60
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−
0.001
−1
−10
−100
−1
000
0
−1
−10
−100
−1
000
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
5
4
3
2
1
0
−1
−10
−100
Collector-base voltage V
CB
(V)
2
SJC00087BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
