2SB1180, 2SB1180A
P
C
T
a
20
−8
(1)T
C
=Ta
(2)Without heat sink
(P
C
=1.3W)
T
C
=25˚C
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
V
CE(sat)
I
C
I
C
/I
B
=500
Collector power dissipation P
C
(W)
Collector current I
C
(A)
15
−6
I
B
=–2.0mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.4mA
−10
10
(1)
−4
25˚C
T
C
=100˚C
−1
–25˚C
5
−2
–0.2mA
(2)
0
0
40
80
120
160
0
0
−1
−2
−3
−4
−5
−
0.1
−
0.1
−1
−10
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
V
BE(sat)
I
C
−100
V
BE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=500
−100
(1)I
C
/I
B
=250
(2)I
C
/I
B
=500
(3)I
C
/I
B
=1000
T
C
=25˚C
Base-emitter saturation voltage V
BE(sat)
(V)
(1) I
C
/I
B
=250
(2) I
C
/I
B
=500
(3) I
C
/I
B
=1000
T
C
=25 C
−10
(3)
−10
T
C
=–25˚C
25˚C
100˚C
−10
(1)
(2)
(3)
−1
(2)
−1
(1)
−1
−
0.1
−
0.1
−1
−10
−
0.1
−
0.1
−1
−10
−
0.1
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
h
FE
I
C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
5
V
CE
=–3V
C
ob
V
CB
10
4
I
E
=0
f=1MHz
T
C
=25˚C
Safe operation area
−100
Non repetitive pulse
T
C
=25˚C
I
CP
I
C
t=1ms
t=10ms
Forward current transfer ratio h
FE
10
4
–25˚C
Collector current I
C
(A)
T
C
=100˚C
25˚C
10
3
−10
10
2
−1
t=300ms
10
3
10
−
0.1
2SB1180A
2SB1180
10
2
−
0.1
−1
−10
1
−
0.1
−1
−10
−100
−
0.01
−1
−10
−100
−1
000
Collector current I
C
(A)
Collector-base voltage V
CB
(V)
Collector-emitter voltage V
CE
(V)
2
SJD00056AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
