Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
Unit: mm
For medium-speed voltage switching
Complementary to 2SD1750, 2SD1750A
■
Features
•
High forward current transfer ratio h
FE
•
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
12.6
±0.3
7.2
±0.3
7.0
±0.3
3.0
±0.2
2.0
±0.2
3.5
±0.2
0˚ to 0.15˚
2.5
±0.2
(1.0)
(1.0)
1.1
±0.1
1.0
±0.2
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SB1180
2SB1180A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25°C
Junction temperature
Storage temperature
Symbol
V
CBO
Rating
−60
−80
−60
−80
−7
−8
−12
15
1.3
150
−55
to
+150
°C
°C
V
A
A
W
V
Unit
V
0.75
±0.1
0.4
±0.1
2.3
±0.2
4.6
±0.4
1
2
3
0.9
±0.1
0˚ to 0.15˚
Collector-emitter voltage 2SB1180
(Base open)
2SB1180A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB1180
2SB1180A
2SB1180
2SB1180A
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
I
CBO
V
CB
= −60
V, I
E
=
0
V
CB
= −80
V, I
E
=
0
V
EB
= −7
V, I
C
=
0
V
CE
= −3
V, I
C
= −4
A
V
CE
= −3
V, I
C
= −8
A
I
C
= −4
A, I
B
= −8
mA
I
C
= −4
A, I
B
= −8
mA
V
CE
= −3
V, I
C
= −1
A, f
=
1 MHz
I
C
= −4
A, I
B1
= −8
mA, I
B2
=
8 mA
V
CC
= −50
V
20
0.5
2.0
1.0
2 000
500
Symbol
V
CEO
Conditions
I
C
= −30
mA, I
B
=
0
Min
−60
−80
Typ
E
Max
Unit
V
−100
−100
−2
10 000
−1.5
−2
mA
V
V
MHz
µs
µs
µs
µA
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
P
2 000 to 5 000 4 000 to 10 000
2.5
±0.2
Publication date: March 2003
SJD00056AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
