2SB1179, 2SB1179A
P
C
T
a
20
−6
(1)T
C
=Ta
(2)Without heat sink
(P
C
=1.3W)
I
C
V
CE
−10
T
C
=25˚C
I
B
=–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
–0.5mA
I
C
V
BE
V
CE
=–3V
Collector power dissipation P
C
(W)
−5
Collector current I
C
(A)
−4
Collector current I
C
(A)
15
−8
−6
T
C
=100˚C
10
(1)
−3
25˚C
–25˚C
–0.4mA
–0.3mA
–0.2mA
−4
−2
5
−1
(2)
0
0
40
80
120
160
0
0
−1
−2
−3
−4
−5
−2
0
0
−
0.8
−1.6
−2.4
−3.2
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/I
B
=250
h
FE
I
C
V
CE
=–3V
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
4
I
E
=0
f=1MHz
T
C
=25˚C
10
6
−10
T
C
=100˚C
25˚C
Forward current transfer ratio h
FE
10
5
10
3
T
C
=100˚C
25˚C
−1
–25˚C
10
4
–25˚C
10
2
−
0.1
10
3
10
−
0.01
−
0.01
−
0.1
−1
−10
10
2
−
0.01
−
0.1
−1
−10
1
−
0.1
−1
−10
−100
Collector current I
C
(A)
Collector current I
C
(A)
Collector-base voltage V
CB
(V)
Safe operation area
−100
Non repetitive pulse
T
C
=25˚C
R
th
t
10
3
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
Collector current I
C
(A)
−10
I
CP
I
C
t=1ms
t=10ms
t=300ms
Thermal resistance R
th
(°C/W)
10
2
(1)
(2)
−1
10
−
0.1
2SB1179A
2SB1179
1
−
0.01
−1
−10
−100
−1
000
10
−1
10
−4
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
SJD00055AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
