2SB1179ATX 参数 Datasheet PDF下载

Power Transistors

2SB1179, 2SB1179A

Silicon PNP epitaxial planar type darlington

For power amplification and switching

Complementary to 2SD1749, 2SD1749A

■

Features

•

High forward current transfer ratio h

FE

which has satisfactory linearity

•

High-speed switching

•

I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

12.6

±0.3

7.2

±0.3

Unit: mm

7.0

±0.3

3.0

±0.2

2.0

±0.2

3.5

±0.2

0˚ to 0.15˚

2.5

±0.2

(1.0)

(1.0)

1.1

±0.1

1.0

±0.2

■

Absolute Maximum Ratings

T

C

=

25°C

Parameter

Collector-base voltage

(Emitter open)

2SB1179

2SB1179A

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

T

a

=

25°C

Junction temperature

Storage temperature

Symbol

V

CBO

Rating

−60

−80

−60

−80

−5

−4

−8

15

1.3

150

−55

to

+150

°C

°C

V

A

A

W

V

Unit

V

0.75

±0.1

0.4

±0.1

2.3

±0.2

4.6

±0.4

1

2

3

0.9

±0.1

0˚ to 0.15˚

Collector-emitter voltage 2SB1179

(Base open)

2SB1179A

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

1: Base

2: Collector

3: Emitter

I-G1 Package

Note) Self-supported type package is also prepared.

Internal Connection

C

B

■

Electrical Characteristics

T

C

=

25°C

±

3°C

Parameter

Collector-emitter voltage

(Base open)

Base-emitter voltage

Collector-base cutoff

current (Emitter open)

Collector-emitter cutoff

current (Base open)

2SB1179

2SB1179A

2SB1179

2SB1179A

I

EBO

h

FE1

h

FE2 *

Collector-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

V

CE(sat)

f

T

t

on

t

stg

t

f

I

CEO

2SB1179

2SB1179A

V

BE

I

CBO

V

CE

= −3

V, I

C

= −3

A

V

CB

= −60

V, I

E

=

0

V

CB

= −80

V, I

E

=

0

V

CE

= −40

V, I

B

=

0

V

CE

= −40

V, I

B

=

0

V

EB

= −5

V, I

C

=

0

V

CE

= −3

V, I

C

= −

0.5 A

V

CE

= −3

V, I

C

= −3

A

I

C

= −3

A, I

B

= −12

mA

I

C

= −5

A, I

B

= −20

mA

V

CE

= −10

V, I

C

= −

0.5 A, f

=

1 MHz

I

C

= −3

A, I

B1

= −12

mA, I

B2

=

12 mA

V

CC

= −50

V

20

0.3

2.0

0.5

1 000

2 000

Symbol

V

CEO

Conditions

I

C

= −30

mA, I

B

=

0

Min

−60

−80

Typ

E

Max

Unit

V

−2.5

−200

−200

−500

−500

−2

10 000

−2

−4

MHz

µs

µs

µs

V

mA



µA

V

µA

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

P

h

FE2

Publication date: February 2003

2 000 to 5 000 4 000 to 10 000

SJD00055AED

2.5

±0.2

1