2SB1169AH 参数 Datasheet PDF下载

Power Transistors

2SB1169, 2SB1169A

Silicon PNP epitaxial planar type

For power amplification

Unit : mm

■

Features

•

High forward current transfer ratio h

FE

which has satisfactory linearity

•

Low collector-emitter saturation voltage V

CE(sat)

•

I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment.

7.0

±0.3

3.0

±0.2

2.0

±0.2

3.5

±0.2

0˚ to 0.15˚

2.5

±0.2

(1.0)

■

Absolute Maximum Ratings

T

C

=

25°C

Parameter

Collector-base voltage

(Emitter open)

2SB1169

2SB1169A

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

T

a

=

25°C

Junction temperature

Storage temperature

Symbol

V

CBO

Rating

−60

−80

−60

−80

−5

−1

−2

15

1.3

150

−55 ∼ +150

°C

°C

V

A

A

W

V

Unit

V

12.6

±0.3

7.2

±0.3

(1.0)

1.1

±0.1

1.0

±0.2

0.75

±0.1

0.4

±0.1

2.3

±0.2

4.6

±0.4

1

2

3

0.9

±0.1

0˚ to 0.15˚

Collector-emitter voltage 2SB1169

(Base open)

2SB1169A

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

1: Base

2: Collector

3: Emitter

I-G1 Package

Note) Self-supported type package is also prepared.

■

Electrical Characteristics

T

C

=

25°C

±

3°C

Parameter

Collector-emitter voltage

(Base open)

Base-emitter voltage

Collector-emitter cutoff

current (E-B short)

Collector-emitter cutoff

current (Base open)

2SB1169

2SB1169A

2SB1169

2SB1169A

I

EBO

h

FE1 *

h

FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

Strage time

Fall time

V

CE(sat)

f

T

t

on

t

stg

t

f

I

CEO

2SB1169

2SB1169A

V

BE

I

CES

V

CE

= −4

V, I

C

= −1

A

V

CE

= −60

V, V

BE

=

0

V

CE

= −80

V, V

BE

=

0

V

CE

= −30

V, I

B

=

0

V

CE

= −60

V, I

B

=

0

V

EB

= −5

V, I

C

=

0

V

CE

= −4

V, I

C

= −

0.2 A

V

CE

= −4

V, I

C

= −1

A

I

C

= −1

A, I

B

= −

0.125 A

V

CE

= −10

V, I

C

= −

0.5 A, f

=

10 MHz

I

C

= −1

A, I

B1

= −50

mA, I

B2

=

50 mA

V

CC

= −50

V

40

0.5

1.2

0.3

40

15

−1

V

MHz

µs

µs

µs

Symbol

V

CEO

Conditions

I

C

= −30

mA, I

B

=

0

Min

−60

−80

−1.3

−200

−200

−300

−300

−1

450

mA



µA

V

µA

Typ

Max

Unit

V

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE1

Publication date: April 2003

R

40 to 90

Q

70 to 150

P

120 to 250

SJD00045AED

O

200 to 450

2.5

±0.2

1