Power Transistors
2SB1154
PC — Ta
IC — VCE
VCE(sat) — IC
120
–20
–16
–12
–8
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3W)
–10
IB=–400mA
100
80
60
40
20
0
–3
–1
–250mA
–200mA
(2)
(1)
–160mA
–120mA
(1)
–100mA
– 0.3
– 0.1
–80mA
–60mA
–40mA
–4
– 0.03
– 0.01
(2)
–20mA
(3)
0
0
25
50
75
100 125 150
0
–2
–4
–6
–8
–10 –12
– 0.1 – 0.3
–1
–3
–10
–30
(
)
(
V
)
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VCE(sat) — IC
VBE(sat) — IC
hFE — IC
–100
IC/IB=10
IC/IB=10
VCE=–2V
–10
1000
–30
–10
–3
–1
300
100
TC=100˚C
25˚C
25˚C
–3
–1
25˚C
–25˚C
TC=–25˚C
100˚C
TC=100˚C
– 0.3
– 0.1
30
10
–25˚C
– 0.3
– 0.1
– 0.03
– 0.01
3
1
– 0.03
– 0.01
– 0.1 – 0.3
–1
–3
–10
–30
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
– 0.1 – 0.3
–1
–3
–10
–30
( )
A
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
fT — IC
ton, tstg, tf — IC
Area of safe operation (ASO)
1000
100
–100
VCE=–10V
f=10MHz
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
Non repetitive pulse
TC=25˚C
300
100
30
10
–30
–10
(–IB1=IB2
CC=–50V
TC=25˚C
)
t=1ms
10ms
V
30
10
3
1
–3
–1
DC
tstg
ton
tf
3
1
0.3
0.1
– 0.3
– 0.1
0.3
0.1
0.03
0.01
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
0
–1 –2 –3 –4 –5 –6 –7 –8
–1
–3
–10 –30 –100 –300 –1000
( )
A
(
A
)
( )
Collector to emitter voltage VCE V
Collector current IC
Collector current IC
2