Power Transistors
P
C
— Ta
20
–12
(1) T
C
=Ta
(2) Without heat sink
(P
C
=1.3W)
15
I
B
=–100mA
–10
–80mA
–60mA
–50mA
–40mA
–6
–35mA
–30mA
–25mA
–4
–20mA
–15mA
–2
(2)
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
–10mA
–5mA
T
C
=25˚C
2SB1148, 2SB1148A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
V
CE(sat)
— I
C
I
C
/I
B
=30
Collector power dissipation P
C
(W)
–3
Collector current I
C
(A)
–8
–1
T
C
=100˚C
25˚C
–25˚C
10
(1)
– 0.3
– 0.1
5
– 0.03
– 0.01
– 0.1
– 0.3
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–10
h
FE
— I
C
I
C
/I
B
=30
10000
V
CE
=–2V
10000
3000
1000
300
100
30
10
3
f
T
— I
C
V
CE
=–10V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
–3
T
C
=–25˚C
100˚C
25˚C
1000
300
100
–25˚C
30
10
3
1
– 0.1 – 0.3
25˚C
–1
T
C
=100˚C
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1
Transition frequency f
T
(MHz)
–10
–30
–100
3000
– 0.3
–1
–3
–10
–1
–3
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
10
I
E
=0
f=1MHz
Ta=25˚C
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(–I
B1
=I
B2
)
V
CC
=–20V
T
C
=25˚C
t
stg
0.3
t
on
0.1
t
f
0.03
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
T
C
=25˚C
I
CP
I
C
t=1ms
–3
–1
300ms
10ms
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
– 0.1 – 0.3
Switching time t
on
,t
stg
,t
f
(
µs
)
3
Collector current I
C
(A)
–10
1
– 0.3
– 0.1
– 0.03
0.01
–1
–3
–10
–30
–100
0
–1
–2
–3
–4
–5
–6
–7
–8
– 0.01
–1
–3
–10
–30
2SB1148A
–100 –300 –1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
2SB1148
PANASONIC [ PANASONIC SEMICONDUCTOR ]
