Power Transistors
2SB1148, 2SB1148A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1752 and 2SD1752A
Unit: mm
7.0±0.3
3.0±0.2
3.5±0.2
s
Features
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
Ratings
–40
–50
–20
–40
–7
–20
–10
15
1.3
150
–55 to +150
Unit
V
7.2±0.3
0.8±0.2
1.1±0.1
0.85±0.1
0.4±0.1
1.0±0.2
10.0
–0.
+0.3
0.75±0.1
2.3±0.2
4.6±0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB1148
2SB1148A
2SB1148
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5±0.2
2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
emitter voltage 2SB1148A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
3.0±0.2
10.2±0.3
7.2±0.3
V
A
A
1.0 max.
2.5
0.75±0.1
0.5 max.
0.9±0.1
0 to 0.15
W
˚C
˚C
1.1±0.1
1
2
3
2.3±0.2
4.6±0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB1148
2SB1148A
2SB1148
2SB1148A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
Conditions
V
CB
= –40V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –3A
I
C
= –10A, I
B
= – 0.33A
I
C
= –10A, I
B
= – 0.33A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
I
C
= –3A, I
B1
= – 0.1A, I
B2
= 0.1A,
V
CC
= –20V
min
typ
max
–50
–50
–50
Unit
µA
µA
V
–20
–40
45
90
260
– 0.6
–1.5
100
400
0.1
0.5
0.1
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
V
V
MHz
pF
µs
µs
µs
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
2.5±0.2
1.0
2.5±0.2
1.0
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
