2SB1071, 2SB1071A
P
C
T
a
40
(1)T
C
=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(P
C
=2.0W)
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−6
I
B
=–80mA
V
CE(sat)
I
C
−100
T
C
=25˚C
I
C
/I
B
=20
Collector power dissipation P
C
(W)
−5
Collector current I
C
(A)
30
−4
–50mA
–45mA
–40mA
–35mA
−10
20
(1)
−3
–30mA
–25mA
–20mA
−1
T
C
=100˚C
25˚C
–25˚C
−2
–15mA
–10mA
10
(2)
−
0.1
−1
(3)
0
0
25
50
75
100
125
150
–5mA
0
0
−2
−4
−6
−8
−10
−
0.01
−
0.01
−
0.1
−1
−10
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
−100
I
C
/I
B
=20
h
FE
I
C
−1
000
T
C
=100˚C
V
CE
=–2V
f
T
I
C
1 000
V
CE
=–2V
f=10MHz
T
C
=25˚C
Base-emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
−10
T
C
=–25˚C
25˚C
100˚C
−100
Transition frequency f
T
(MHz)
25˚C
–25˚C
100
−1
−10
10
−
0.1
−1
1
−
0.01
−
0.01
−
0.1
−1
−10
−
0.1
−
0.01
−
0.1
−1
−10
0.1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
t
on
, t
stg
, t
f
I
C
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
µs
)
10
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–20V
T
C
=25˚C
Safe operation area
−100
Non repetitive pulse
T
C
=25˚C
1
t
on
Collector current I
C
(A)
−10
I
CP
I
C
t=1ms
t=300ms
t=10ms
−1
0.1
t
stg
t
f
−
0.1
2SB1071A
2SB1071
0.01
0
−2
−4
−6
−8
−
0.01
−1
−10
−100
−1
000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
2
SJD00041AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
