Power Transistors
2SB1070, 2SB1070A
Silicon PNP epitaxial planar type
For low-voltage switching
8.5
±0.2
Unit: mm
3.4
±0.3
1.0
±0.1
6.0
±0.2
10.0
±0.3
1.5
±0.1
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
High-speed switching
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
4.4
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SB1070
2SB1070A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25°C
Junction temperature
Storage temperature
Symbol
V
CBO
Rating
−40
−50
−20
−40
−5
−4
−8
25
1.3
150
−55
to
+150
°C
°C
V
A
A
W
V
Unit
V
Collector-emitter voltage 2SB1070
(Base open)
2SB1070A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB1070
2SB1070A
2SB1070
2SB1070A
I
EBO
h
FE1
h
FE2 *
Base-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
BE(sat)
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CBO
V
CB
= −40
V, I
E
=
0
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −2
V, I
C
= −
0.1 A
V
CE
= −2
V, I
C
= −1
A
I
C
= −2
A, I
B
= −
0.1 A
I
C
= −2
A, I
B
= −
0.1 A
V
CE
= −5
V, I
C
= −
0.5 A, f
=
10 MHz
I
C
= −2
A
I
B1
= −
0.2 A, I
B2
=
0.2 A
V
CC
= −20
V
150
0.3
0.4
0.1
45
90
260
−1.5
−
0.5
V
V
MHz
µs
µs
µs
Symbol
V
CEO
Conditions
I
C
= −10
mA, I
B
=
0
Min
−20
−40
−50
−50
−50
µA
µA
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
90 to 180
P
130 to 260
(7.6)
(1.5)
1
2
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
2.0
±0.5
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
Publication date: February 2003
SJD00040AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
