2SB1063
P
C
T
a
80
(1)T
C
=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(P
C
=2.0W)
I
C
V
CE
−6
I
B
=–80mA
T
C
=25˚C
I
C
V
BE
−6
25˚C
T
C
=100˚C
–25˚C
V
CE
=–5V
Collector power dissipation P
C
(W)
−5
–70mA
–60mA
–50mA
–40mA
−5
Collector current I
C
(A)
−4
Collector current I
C
(A)
60
−4
40
(1)
−3
–30mA
–20mA
–10mA
−3
−2
−2
20
(2)
(3)
0
0
40
80
120
160
−1
–5mA
−1
0
0
−2
−4
−6
−8
−10
−12
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/I
B
=10
h
FE
I
C
10
4
f
T
I
C
V
CE
=–5V
1 000
V
CE
=–5V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
−10
10
3
T
C
=100˚C
25˚C
Transition frequency f
T
(MHz)
−1
−10
100
−1
T
C
=100˚C
25˚C
–25˚C
10
2
–25˚C
10
−
0.1
10
1
−
0.01
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
0.1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Safe operation area
−100
Non repetitive pulse
T
C
=25˚C
R
th
t
10
2
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
(1)
Thermal resistance R
th
(°C/W)
Collector current I
C
(A)
−10
I
CP
I
C
t=1ms
DC
t=10ms
10
(2)
−1
1
−
0.1
10
−1
−
0.01
−1
−10
−100
−1
000
10
−2
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
SJD00039AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
