Transistor
P
C
— Ta
500
–24
Ta=25˚C
450
–20
–50
25˚C
Ta=75˚C
2SB1036
I
C
— V
CE
–60
V
CE
=–5V
I
C
— V
BE
Collector power dissipation P
C
(mW)
–45µA
–16
–40µA
–35µA
–12
–30µA
–25µA
–8
–20µA
–15µA
–4
–10µA
–5µA
0
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Collector current I
C
(mA)
Collector current I
C
(A)
400
I
B
=–50µA
–40
–25˚C
–30
–20
–10
0
0
–2
–4
–6
–8
–10
–12
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
I
C
/I
B
=10
1000
900
800
700
600
500
400
300
200
100
0
– 0.1 – 0.3
h
FE
— I
C
160
V
CE
=–5V
f
T
— I
E
V
CB
=–5V
Ta=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
–10
–30
–100
140
120
100
80
60
40
20
0
0.1
Ta=75˚C
25˚C
–25˚C
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
25˚C
–25˚C
–1
–3
–10
–30
–100
–1
–3
0.3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
10
120
I
E
=0
f=1MHz
Ta=25˚C
NV — I
C
V
CE
=–10V
G
V
=80dB
Function=FLAT
Collector output capacitance C
ob
(pF)
9
8
7
6
5
4
3
2
1
0
–1
100
Noise voltage NV (mV)
80
R
g
=100kΩ
60
22kΩ
40
4.7kΩ
20
–3
–10
–30
–100
0
– 0.01
– 0.03
– 0.1
– 0.3
–1
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
