Transistor
2SB1036
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
4.0±0.2
s
Features
q
q
q
0.7±0.1
s
Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–120
–120
–5
–50
–20
300
150
–55 ~ +150
Unit
V
1
2
3
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1.27 1.27
V
V
mA
mA
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
2.54±0.15
EIAJ:SC–72
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –5V, I
C
= –2mA
I
C
= –20mA, I
B
= –2mA
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= –40V, I
C
= –1mA, G
V
= 80dB,
R
g
= 100kΩ, Function = FLAT
200
150
–120
–120
–5
180
520
– 0.6
V
MHz
mV
min
typ
max
–100
–1
Unit
nA
µA
V
V
V
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
h
FE
Rank
2.0±0.2
marking
+0.2
0.45–0.1
15.6±0.5
Optimum for high-density mounting.
Allowing supply with the radial taping.
Low noise voltage NV.
3.0±0.2
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
