2SB0968
P
C
T
a
16
T
C
=Ta
I
C
V
CE
T
C
=25˚C
I
B
=–40mA
–35mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/I
B
=10
−4.0
−3.5
Collector power dissipation P
C
(W)
Collector current I
C
(A)
12
−3.0
−2.5
–30mA
–25mA
–20mA
−1
8
−2.0
–15mA
−1.5
−1.0
–10mA
–5mA
T
C
=100˚C
25˚C
–25˚C
−
0.1
4
−
0.5
0
0
0
40
80
120
160
0
−2
−4
−6
−8
−10
−
0.01
−
0.01
−
0.1
−1
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
−10
I
C
/I
B
=10
h
FE
I
C
240
V
CE
=–5V
f
T
I
E
V
CB
=–5V
f=200MHz
T
C
=25˚C
1 000
Forward current transfer ratio h
FE
T
C
=100˚C
25˚C
Transition frequency f
T
(MHz)
200
160
−1
T
C
=–25˚C
100˚C
25˚C
100
–25˚C
120
−
0.1
10
80
40
−
0.01
−
0.01
−
0.1
−1
1
−
0.01
−
0.1
−1
0
10
10
2
10
3
10
4
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
−120
V
CER
R
BE
Collector-emitter voltage
(V)
V
(Resistor between B and E)
CER
I
E
=0
f=1MHz
T
C
=25˚C
I
CEO
T
a
T
C
=25˚C
1 000
140
120
100
80
60
40
20
0
−1
V
CE
=–12V
−100
−60
−40
I
CEO
(T
a
)
I
CEO
(T
a
=
25°C)
0.01
0.1
1
10
−80
100
10
−20
−10
−100
0
0.001
1
0
20
40
60
80
100
120
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
Ambient temperature T
a
(°C)
2
SJD00035AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
