Transistor
2SB956
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1280
Unit: mm
s
Features
q
q
q
4.5±0.1
1.6±0.2
1.5±0.1
1.0
–0.2
+0.1
Large collector power dissipation P
C
.
Low collector to emitter saturation voltage V
CE(sat)
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25˚C)
Ratings
–20
–20
–5
–2
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
2.6±0.1
0.4max.
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
H
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –500mA
*2
V
CE
= –2V, I
C
= –1.5A
*2
I
C
= –1A, I
B
= –50mA
*2
I
C
= –500mA, I
B
= –50mA
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –6V, I
E
= 0, f = 1MHz
200
40
*2
min
typ
max
–1
Unit
µA
V
V
–20
–5
130
50
– 0.5
–1.2
280
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Rank
h
FE1
R
130 ~ 210
HR
S
180 ~ 280
HS
Marking Symbol
2.5±0.1
+0.25
V
V
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
