2SB0942 参数 Datasheet PDF下载

Power Transistors

2SB0942

(2SB942)

, 2SB0942A

(2SB942A)

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SD1267, 2SD1267A

■

Features

16.7

±0.3

0.7

±0.1

Unit: mm

10.0

±0.2

5.5

±0.2

4.2

±0.2

4.2

±0.2

2.7

±0.2

•

High forward current transfer ratio h

FE

which has satisfactory linearity

•

Large collector-emitter saturation voltage V

CE(sat)

•

Full-pack package which can be installed to the heat sink with one screw

7.5

±0.2

φ

3.1

±0.1

■

Absolute Maximum Ratings

T

C

=

25°C

Parameter

Collector-base voltage

(Emitter open)

2SB0942

2SB0942A

V

CEO

V

EBO

I

C

I

CP

P

C

T

a

=

25°C

T

j

T

stg

Symbol

V

CBO

Rating

−60

−80

−60

−80

−5

−4

−8

40

2

150

−55

to

+150

°C

°C

V

A

A

W

1 2 3

Unit

V

Solder Dip

(4.0)

14.0

±0.5

1.4

±0.1

1.3

±0.2

0.5

+0.2

–0.1

0.8

±0.1

Collector-emitter voltage 2SB0942

(Base open)

2SB0942A

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power

dissipation

Junction temperature

Storage temperature

V

2.54

±0.3

5.08

±0.5

1: Base

2: Collector

3: Emitter

EIAJ: SC-67

TO-220F-A1 Package

■

Electrical Characteristics

T

C

=

25°C

±

3°C

Parameter

Collector-emitter voltage

(Base open)

Base-emitter voltage

Collector-emitter

cutoff current (E-B short)

2SB0942

2SB0942A

I

CEO

I

EBO

h

FE1 *

h

FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

V

CE(sat)

f

T

t

on

t

stg

t

f

2SB0942

2SB0942A

V

BE

I

CES

V

CE

= −4

V, I

C

= −3

A

V

CE

= −60

V, V

BE

=

0

V

CE

= −80

V, V

BE

=

0

V

CE

= −30

V, I

B

=

0

V

EB

= −5

V, I

C

=

0

V

CE

= −4

V, I

C

= −1

A

V

CE

= −4

V, I

C

= −3

A

I

C

= −4

A, I

B

= −

0.4 A

V

CE

= −10

V, I

C

= −

0.1 A, f

=

10 MHz

I

C

= −4

A, I

B1

= −

0.4 A, I

B2

=

0.4 A

V

CC

= −50

V

30

0.2

0.5

0.2

40

15

−1.5

V

MHz

µs

µs

µs

Symbol

V

CEO

Conditions

I

C

= −30

mA, I

B

=

0

Min

−60

−80

−2

−400

−400

−700

−1

250

µA

mA



V

µA

Typ

Max

Unit

V

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE1

R

40 to 90

Q

70 to 150

P

120 to 250

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2003

SJD00022BED

1