2SB0942, 2SB0942A
P
C
T
a
50
I
C
V
CE
−6
I
B
=–120mA
T
C
=25˚C
I
C
V
BE
−10
V
CE
=–4V
Collector power dissipation P
C
(W)
40
Collector current I
C
(A)
−4
30
(1)
20
–60mA
Collector current I
C
(A)
(1)T
C
=Ta
(2)With a 100×100×2mm
Al heat sink
(3)With a 50×50×2mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
−5
–100mA
–80mA
−8
−6
25˚C
T
C
=100˚C
–25˚C
−3
–40mA
–20mA
–10mA
−4
−2
10
(3)
(4)
0
0
40
(2)
−1
–8mA
–5mA
−2
80
120
160
0
0
−2
−4
−6
−8
−10
−12
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/I
B
=10
h
FE
I
C
10
4
V
CE
=–4V
f
T
I
C
10
4
Forward current transfer ratio h
FE
V
CE
=–5V
f=10MHz
T
C
=25˚C
−10
10
3
25˚C
T
C
=100˚C
Transition frequency f
T
(MHz)
−1
−10
10
3
−1
25˚C
T
C
=100˚C
–25˚C
10
2
–25˚C
10
2
−
0.1
10
10
−
0.01
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Safe operation area
−100
Non repetitive pulse
T
C
=25˚C
R
th
t
10
3
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
(1)
Thermal resistance R
th
(°C/W)
10
2
Collector current I
C
(A)
−10
I
CP
I
C
t=1ms
t=10ms
DC
10
(2)
−1
1
−
0.1
2SB0942A
2SB0942
10
−1
−
0.01
−1
−10
−100
−1
000
10
−2
10
−4
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
SJD00022BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
