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2SB0940 参数 Datasheet PDF下载

2SB0940图片预览
型号: 2SB0940
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型 [Silicon PNP epitaxial planar type]
分类和应用:
文件页数/大小: 3 页 / 75 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SB0940的Datasheet PDF文件第2页浏览型号2SB0940的Datasheet PDF文件第3页  
Power Transistors
2SB0940
(2SB940)
, 2SB0940A
(2SB940A)
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264, 2SD1264A
Features
High collector-emitter voltage (Base open) V
CEO
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with one screw
16.7
±0.3
0.7
±0.1
Unit: mm
10.0
±0.2
5.5
±0.2
4.2
±0.2
4.2
±0.2
2.7
±0.2
7.5
±0.2
φ
3.1
±0.1
Solder Dip
(4.0)
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SB0940
(Base open)
2SB0940A
V
EBO
I
C
I
CP
P
C
T
a
=
25°C
T
j
T
stg
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
Rating
−200
−150
−180
−6
−2
−3
30
2
150
−55
to
+150
°C
°C
V
A
A
W
Unit
V
V
14.0
±0.5
0.8
±0.1
2.54
±0.3
5.08
±0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage
(Base open)
2SB0940
2SB0940A
V
EBO
V
BE
I
CBO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
I
E
= −500 µA,
I
C
=
0
V
CE
= −10
V, I
C
= −400
mA
V
CB
= −200
V, I
E
=
0
V
EB
= −4
V, I
C
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −10
V, I
C
= −400
mA
I
C
= −500
mA, I
B
= −50
mA
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
30
60
50
−1
V
MHz
Symbol
V
CBO
V
CEO
Conditions
I
C
= −50 µA,
I
E
=
0
I
C
= −5
mA, I
B
=
0
Min
−200
−150
−180
−6
−1
−50
−50
240
V
V
µA
µA
Typ
Max
Unit
V
V
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
60 to 140
P
100 to 240
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00021BED
1