Power Transistors
2SB0937
(2SB937)
, 2SB0937A
(2SB937A)
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1260, 2SD1260A
■
Features
•
High forward current transfer ratio h
FE
•
High-speed switching
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
10.0
±0.3
1.5
±0.1
Unit: mm
8.5
±0.2
6.0
±0.2
3.4
±0.3
1.0
±0.1
4.4
±0.5
Parameter
Collector-base voltage
(Emitter open)
2SB0937
2SB0937A
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
a
=
25°C
T
j
T
stg
Rating
−60
−80
−60
−80
−5
−2
−4
35
1.3
150
−55
to
+150
Unit
V
(6.5)
Collector-emitter voltage 2SB0937
(Base open)
2SB0937A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
V
V
A
A
W
B
°C
°C
E
Conditions
Min
−60
−80
Typ
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
Junction temperature
Storage temperature
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
Collector-emitter cutoff
current (Base open)
2SB0937
2SB0937A
2SB0937
2SB0937A
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
2SB0937
2SB0937A
V
BE
I
CBO
V
CE
=
−4
V,I
C
=
−2
A
V
CB
=
−60
V,I
E
= 0
V
CB
=
−80
V,I
E
= 0
V
CE
=
−30
V,I
B
= 0
V
CE
=
−40
V,I
B
= 0
V
EB
=
−5
V,I
C
= 0
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −2
A
I
C
= −2
A, I
B
= −8
mA
V
CE
= −10
V, I
C
= −0.5
A, f
=
1 MHz
I
C
= −2
A,
I
B1
= −8
mA, I
B2
= 8
mA
V
CC
= −50
V
20
0.4
1.5
0.5
1 000
2 000
Symbol
V
CEO
I
C
= −30
mA, I
B
=
0
Max
(7.6)
Unit
V
−2.8
−1
−1
−2
−2
−2
10 000
−2.5
V
mA
mA
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
mA
V
MHz
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
P
Note) The part number in the parenthesis shows conventional part number.
2 000 to 5 000 4 000 to 10 000
(1.5)
■
Absolute Maximum Ratings
T
C
=
25°C
1
2
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
2.0
±0.5
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
Publication date: March 2003
SJD00018BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
