2SB0934 参数 Datasheet PDF下载

Power Transistors

2SB0934

(2SB934)

Silicon PNP epitaxial planar type

For Power switching

Complementary to 2SD1257

■

Features

•

Low collector-emitter saturation voltage V

CE(sat)

•

Satisfactory linearity of forward current transfer ratio h

FE

•

Large collector current I

C

•

N type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment.

10.0

±0.3

1.5

±0.1

8.5

±0.2

6.0

±0.2

3.4

±0.3

1.0

±0.1

Unit: mm

4.4

±0.5

2.0

±0.5

2.54

±0.3

1.4

±0.1

5.08

±0.5

1

2

3

0.8

±0.1

R = 0.5

R = 0.5

1.0

±0.1

0.4

±0.1

(8.5)

(6.0)

4.4

±0.5

0 to 0.4

■

Absolute Maximum Ratings

T

C

=

25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

T

a

=

25°C

Junction temperature

Storage temperature

T

j

T

stg

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Rating

−130

−80

−7

−7

−15

40

1.3

150

−55

to

+150

°C

°C

Unit

V

V

V

A

A

W

(6.5)

1: Base

2: Collector

3: Emitter

N-G1 Package

Note) Self-supported type package is also prepared.

■

Electrical Characteristics

T

C

=

25°C

±

3°C

Parameter

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Symbol

V

CEO

I

CBO

I

EBO

h

FE1

h

FE2 *

Base-emitter voltage

Collector-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

2. *: Rank classification

Rank

h

FE2

Q

90 to 180

P

130 to 260

V

BE(sat)

V

CE(sat)

f

T

t

on

t

stg

t

f

Conditions

I

C

= −10

mA, I

B

=

0

V

CB

= −100

V, I

E

=

0

V

EB

= −5

V, I

C

=

0

V

CE

= −2

V, I

C

= −

0.1 A

V

CE

= −2

V, I

C

= −3

A

I

C

= −5

A, I

B

= −

0.25 A

I

C

= −5

A, I

B

= −

0.25 A

V

CE

= −10

V, I

C

= −

0.5 A, f

=

10 MHz

I

C

= −3

A,

I

B1

= −

0.3 A, I

B2

=

0.3 A

V

CC

= −50

V

30

0.5

1.5

0.1

45

90

260

−1.5

−

0.5

V

V

MHz

µs

µs

µs

Min

−80

−10

−50

Typ

Max

Unit

V

µA

µA



Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Note) The part number in the parenthesis shows conventional part number.

Publication date: April 2003

SJD00016BED

(7.6)

(1.5)

1.3

14.4

±0.5

3.0

+0.4

–0.2

1.5

+0

–0.4

1