2SB0931
P
C
T
a
40
(1)T
C
=
T
a
(2)With a 50 mm
×
50 mm
×
2 mm
Al heat sink
(3)Without heat sink
(P
C
=
1.3 W)
−6
I
C
V
CE
T
C
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
20
Collector power dissipation P
C
(W)
−5
Collector current I
C
(A)
30
(1)
I
B
= −100
mA
−4
−80
mA
−60
mA
−40
mA
−30
mA
−20
mA
−16
mA
−12
mA
−8
mA
−4
mA
0
−2
−4
−6
−8
−10
−10
20
−3
−1
−2
T
C
=
100°C
−25°C
10
(2)
(3)
0
−
0.1
25°C
−1
0
0
40
80
120
160
−
0.01
−
0.01
−
0.1
−1
−10
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
−100
h
FE
I
C
I
C
/ I
B
=
20
10
4
V
CE
= −2
V
f
T
I
C
10
4
V
CE
= −10
V
f
=
10 MHz
T
C
=
25°C
Base-emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
−10
Transition frequency f
T
(MHz)
10
3
T
C
=
100°C
10
2
−25°C
25°C
10
3
−1
T
C
= −100°C
−25°C
25°C
10
2
−
0.1
10
10
−
0.01
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
V
CB
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
µs
)
t
on
, t
stg
, t
f
I
C
I
E
=
0
f
=
1 MHz
T
C
=
25°C
Safe operation area
−100
Non repetitive pulse
T
C
=
25°C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
4
100
Collector current I
C
(A)
10
3
10
Pulsed t
w
=
1 ms
Duty cycle
=
1%
I
C
/ I
B
=
10
(−I
B1
=
I
B2
)
V
CC
= −50
V
T
a
=
25°C
−10
I
CP
I
C
t
=
0.5 ms
t
=
1 ms
10
2
1
t
stg
t
on
t
f
−1
t
=
10 ms
t
=
300 ms
10
0.1
−
0.1
1
−
0.1
−1
−10
−100
0.01
0
−
0.8
−1.6
−2.4
−3.2
−
0.01
−1
−10
−100
−1
000
Collector-base voltage V
CB
(V)
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
2
SJD00013BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
