2SB0930, 2SB0930A
P
C
T
a
50
(1)T
C
=
T
a
(2)With a 50 mm
×
50 mm
×
2 mm Al heat sink
(3)Without heat sink
(P
C
=
1.3 W)
−6
I
C
V
CE
I
B
= −120
mA
T
C
=
25°C
−100
mA
−10
I
C
V
BE
V
CE
= −4
V
Collector power dissipation P
C
(W)
40
(1)
30
−5
−8
Collector current I
C
(A)
−4
Collector current I
C
(A)
−80
mA
−60
mA
−40
mA
−20
mA
−10
mA
−1
−8
mA
−5
mA
−6
T
C
=
100°C
25°C
−25°C
−3
20
−4
−2
10
(2)
(3)
0
−2
0
0
40
80
120
160
0
−2
−4
−6
−8
−10
−12
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
10
4
V
CE
= −4
V
10
4
f
T
I
C
V
CE
= −5
V
f
=
1 MHz
T
C
=
25°C
Forward current transfer ratio h
FE
−10
10
3
T
C
=
100°C
10
2
−25°C
25°C
Transition frequency f
T
(MHz)
−1
−10
10
3
−1
25°C
T
C
=
100°C
−25°C
10
2
−
0.1
10
10
−
0.01
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Safe operation area
−100
Non repetitive pulse
T
C
=
25°C
10
3
R
th
t
(1)Without heat sink
(2)With a 50 mm
×
50 mm
×
2 mm Al heat sink
(1)
(2)
10
Collector current I
C
(A)
−10
I
CP
I
C
t
=
1 ms
t
=
10 ms
t
=
300 ms
−1
Thermal resistance R
th
(°C/W)
10
2
1
−
0.1
10
−1
−
0.01
−1
−10
−100
−1
000
10
−2
10
−4
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
SJD00012BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
