Transistors
2SB0873
(2SB873)
Silicon PNP epitaxial planar type
For low-frequency power amplification
For DC-DC converter
For stroboscope
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Large collector current I
C
5.9
±0.2
Unit: mm
4.9
±0.2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−30
−20
−7
−5
−10
1
150
−55
to
+150
Unit
V
V
1 2 3
0.45
+0.2
–0.1
(1.27)
(1.27)
0.45
+0.2
–0.1
13.5
±0.5
0.7
+0.3
–0.2
0.7
±0.1
8.6
±0.2
V
A
A
W
°C
°C
2.54
±0.15
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common-emitter reverse transfer)
Symbol
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −10
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −2
V, I
C
= −2
A
I
C
= −3
A, I
B
= −
0.1 A
V
CB
= −6
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −20
V, I
E
=
0, f
=
1 MHz
120
85
90
Min
−20
−7
−100
−100
625
−1
Typ
Max
Unit
V
V
nA
nA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
P
90 to 135
Q
120 to 205
R
180 to 625
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00061BED
(3.2)
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
