Transistor
P
C
— Ta
1.2
–6
Ta=25˚C
I
B
=–40mA
1.0
–5
–35mA
–30mA
–25mA
–4
–20mA
–15mA
–10mA
–2
–5mA
–1
–1mA
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
0
– 0.4
– 0.8
–10
2SB873
I
C
— V
CE
–12
V
CE
=–2V
25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
Collector current I
C
(A)
Ta=75˚C
–8
–25˚C
0.8
0.6
–3
–6
0.4
–4
0.2
–2
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=30
600
h
FE
— I
C
240
V
CE
=–2V
Ta=75˚C
500
25˚C
f
T
— I
E
V
CB
=–6V
Ta=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
–1
–3
–10
200
400
160
300
–25˚C
120
– 0.3
– 0.1
– 0.03
200
80
100
40
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
200
–100
I
E
=0
f=1MHz
Ta=25˚C
–30
Area of safe operation (ASO)
Single pulse
Ta=25˚C
Collector output capacitance C
ob
(pF)
180
160
140
120
100
80
60
40
20
0
–1
Collector current I
C
(A)
–10
–3
–1
I
CP
I
C
t=1s
t=10ms
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
–3
–10
–30
–100
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
