2SB0792 参数 Datasheet PDF下载

Transistors

2SB0792

(2SB792)

, 2SB0792A

(2SB792A)

Silicon PNP epitaxial planar type

For high breakdown voltage low-noise amplification

Unit: mm

■

Features

•

High collector-emitter voltage (Base open) V

CEO

•

Low noise voltage NV

•

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing

0.40

+0.10

–0.05

3

1.50

+0.25

–0.05

2.8

+0.2

–0.3

0.16

+0.10

–0.06

1

2

(0.65)

(0.95) (0.95)

■

Absolute Maximum Ratings

T

a

=

25°C

Parameter

Collector-base voltage

(Emitter open)

2SB0792

2SB0792A

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

Symbol

V

CBO

Rating

−150

−185

−150

−185

−5

−50

−100

200

150

−55

to

+150

V

mA

mA

mW

°C

°C

V

Unit

V

10˚

1.9

±0.1

2.90

+0.20

–0.05

1.1

+0.2

–0.1

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Marking Symbol:

•

2SB0792: I

•

2SB0792A: 2F

■

Electrical Characteristics

T

a

=

25°C

±

3°C

Parameter

Collector-emitter voltage

(Base open)

2SB0792

2SB0792A

V

EBO

I

CBO

h

FE

V

CE(sat)

f

T

C

ob

NV

I

E

= −10 µA,

I

C

=

0

V

CB

= −100

V, I

E

=

0

V

CE

= −5

V, I

C

= −10

mA

I

C

= −30

mA, I

B

= −3

mA

V

CB

= −10

V, I

E

=

10 mA, f

=

200 MHz

V

CB

= −10

V, I

E

=

0, f

=

1 MHz

V

CE

= −10

V, I

C

= −1

mA, G

V

=

80 dB

R

g

=

100 kΩ, Function

=

FLAT

200

4

150

130

130

Symbol

V

CEO

Conditions

I

C

= −100 µA,

I

B

=

0

Min

−150

−185

−5

−1

450

330

−1

V

MHz

pF

mV

V

µA



Typ

Max

Unit

V

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer

ratio

*

2SB0792

2SB0792A

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

(Common base, input open circuited)

Noise voltage

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE

Marking

symbol

2SB0792

2SB0792A

R

130 to 220

IR

2FR

S

185 to 330

IS

2FS

T

260 to 450

IT



Note) The part numbers in the parenthesis show conventional part number.

Publication date: March 2003

SJC00058BED

0 to 0.1

Collector-emitter voltage 2SB0792

(Base open)

2SB0792A

1.1

+0.3

–0.1

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

0.4

±0.2

5˚

1