Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD814
2.8
–0.3
+0.2
Unit: mm
s
Features
q
q
q
0.65±0.15
+0.25
1.5
–0.05
0.65±0.15
s
Absolute Maximum Ratings
(Ta=25˚C)
1.1
–0.1
+0.2
2
Collector to
base voltage
Collector to
2SB792
2SB792A
2SB792
–185
–150
–185
–5
–100
–50
200
150
–55 ~ +150
emitter voltage 2SB792A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol :
I
(2SB792)
2F
(2SB792A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
2SB792
2SB792A
(Ta=25˚C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –100µA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30µA, I
B
= –3mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB,
R
g
= 100kΩ, Function = FLAT
200
4
150
–150
–185
–5
130
130
450
330
–1
V
MHz
pF
mV
min
typ
max
–1
Unit
µA
V
V
Emitter to base voltage
Forward current
transfer ratio
2SB792
2SB792A
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
*
h
FE
Rank classification
Rank
h
FE
R
130 ~ 220
2SB792
2SB792A
IR
2FR
S
185 ~ 330
IS
2FS
T
260 ~ 450
IT
—
Marking
Symbol
0 to 0.1
V
CBO
–150
V
0.1 to 0.3
0.4±0.2
0.8
Parameter
Symbol
Ratings
Unit
0.16
–0.06
+0.1
0.4
–0.05
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
–0.05
1
1.9±0.2
+0.2
0.95
3
+0.1
1.45
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
