2SB0790
P
C
T
a
800
−1.2
I
C
V
CE
T
a
=
25°C
I
B
= −10
mA
−1.0
−9
mA
−8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
Collector power dissipation P
C
(mW)
700
600
500
400
300
200
100
0
Collector current I
C
(mA)
−10
−
0.8
−
0.6
−1
T
a
=
75°C
25°C
−25°C
−
0.4
−
0.1
−
0.2
0
20
40
60
80 100 120 140 160
0
0
−1
−2
−3
−4
−5
−6
−
0.01
−
0.01
−
0.1
−1
−10
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
−100
h
FE
I
C
600
V
CE
= −2
V
320
280
f
T
I
E
V
CB
= −10
V
T
a
=
25°C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
Forward current transfer ratio h
FE
−10
Transition frequency f
T
(MHz)
−
0.1
−1
−10
500
240
200
160
120
80
40
400
25°C
−1
T
a
= −25°C
75°C
300 T
a
=
75°C
25°C
200
−25°C
−
0.1
100
−
0.01
−
0.01
−
0.1
−1
−10
0
−
0.01
0
0.1
1
10
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
80
70
60
50
40
30
20
10
0
−1
I
E
=
0
f
=
1 MHz
T
a
=
25°C
−10
−100
Collector-base voltage V
CB
(V)
2
SJC00057BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
