2SB0788
P
C
T
a
500
−60
25°C
I
C
V
CB
V
CE
= −5
V
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
400
−50
T
a
=
75°C
−40
−25°C
−10
300
−30
−1
200
−20
25°C
T
a
=
75°C
−
0.1
100
−10
−25°C
0
0
0
20
40
60
80 100 120 140 160
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
−
0.01
−
0.1
−1
−10
−100
Ambient temperature T
a
(
°C
)
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
I
C
600
V
CE
= −5
V
f
T
I
E
280
V
CB
= −10
V
T
a
=
25°C
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
5
I
E
=
0
f
=
1 MHz
T
a
=
25°C
320
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
500
T
a
=
75°C
25°C
−25°C
4
240
200
160
120
80
40
400
3
300
2
200
100
1
0
−
0.1
−1
−10
−100
0
0.1
1
10
100
0
−1
−10
−100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
NV
I
C
120
V
CE
= −10
V
G
V
=
80 dB
Function
=
FLAT
R
g
=
100 kΩ
100
Noise voltage NV (mV)
80
60
22 kΩ
40
4.7 kΩ
20
0
−
0.01
−
0.1
−1
Collector current I
C
(mA)
2
SJC00055BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
