Transistors
2SB0788
(2SB788)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD0958 (2SD958)
(0.4)
Unit: mm
6.9
±0.1
(1.5)
(1.5)
3.5
±0.1
2.5
±0.1
(1.0)
(1.0)
2.0
±0.2
2.4
±0.2
1.0
±0.1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−120
−120
−7
−20
−50
400
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
°C
°C
3
(2.5)
2
(2.5)
1
1.25
±0.05
■
Absolute Maximum Ratings
T
a
=
25°C
(0.85)
0.55
±0.1
0.45
±0.05
1: Base
2: Collector
3: Emitter
M-A1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
NV
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
CE
= −2
V, I
C
= −2
A
I
C
= −20
mA, I
B
= −2
mA
V
CE
= −40
V, I
C
= −1
mA, G
V
=
80 dB
R
g
=
100 kΩ, Function
=
FLAT
180
Min
−120
−120
−7
−100
−1
520
−
0.6
150
Typ
Max
Unit
V
V
V
nA
µA
V
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
180 to 360
R
260 to 520
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00055BED
4.1
±0.2
•
High collector-emitter voltage (Base open) V
CEO
•
Low noise voltage NV
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R 0.9
R 0.7
4.5
±0.1
■
Features
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
