Transistor
NV — V
CE
160
140
I
C
=–1mA
G
V
=80dB
Function=FLAT
300
I
C
=–1mA
G
V
=80dB
Function=RIAA
2SB745, 2SB745A
NV — V
CE
160
140
V
CE
=–10V
G
V
=80dB
Function=FLAT
NV — I
C
Noise voltage NV (mV)
Noise voltage NV (mV)
120
R
g
=100kΩ
100
80
60
40
4.7kΩ
20
0
–1
22kΩ
Noise voltage NV (mV)
240
R
g
=100kΩ
180
120
100
80
60
22kΩ
40
4.7kΩ
20
0
– 0.01
R
g
=100kΩ
120
22kΩ
60
4.7kΩ
–3
–10
–30
–100
0
–1
–3
–10
–30
–100
– 0.03
– 0.1
– 0.3
–1
Collector to emitter voltage V
CE
(V)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
NV — I
C
300
V
CE
=–10V
G
V
=80dB
Function=RIAA
160
140
NV — R
g
300
V
CE
=–10V
G
V
=80dB
Function=FLAT
NV — R
g
V
CE
=–10V
G
V
=80dB
Function=RIAA
Noise voltage NV (mV)
Noise voltage NV (mV)
120
100
80
60
I
C
=–1mA
40
– 0.5mA
20
0
– 0.1mA
180
Noise voltage NV (mV)
240
240
180
120
R
g
=100kΩ
22kΩ
4.7kΩ
120
60
60
– 0.5mA
0
I
C
=–2mA
– 0.1mA
10
30
100
0
– 0.01
– 0.03
– 0.1
– 0.3
–1
1
3
10
30
100
1
3
Collector current I
C
(mA)
Signal source resistance R
g
(kΩ)
Signal source resistance R
g
(kΩ)
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
