Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SD661 and 2SD661A
Unit: mm
6.9±0.1
0.4
q
q
q
2.4±0.2 2.0±0.2 3.5±0.1
Low noise voltage NV.
High foward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
s
2.5±0.1
1.0
Features
1.5
1.5 R0.9
R0.9
1.0±0.1
R
0.
s
0.85
Absolute Maximum Ratings
(Ta=25˚C)
0.55±0.1
0.45±0.05
1.25±0.05
Parameter
Collector to
base voltage
Collector to
2SB745
2SB745A
2SB745
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–35
–55
–35
–55
–5
–200
–50
400
150
–55 ~ +150
Unit
V
3
2
1
emitter voltage 2SB745A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Collector
3:Emitter
2.5
2.5
EIAJ:SC–71
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SB745
2SB745A
2SB745
2SB745A
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CB
= –5V, I
E
= 2mA
I
C
= –100mA, I
B
= –10mA
V
CE
= –1V, I
C
= –100mA
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
– 0.7
150
150
–35
–55
–35
–55
–5
180
700
– 0.6
–1
V
V
MHz
mV
min
typ
max
–100
–1
Unit
nA
µA
V
4.1±0.2
4.5±0.1
7
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
h
FE
Rank
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
