2SB0710, 2SB0710A
P
C
T
a
240
−1
200
I
C
V
CE
T
a
=
25°C
−800
−700
I
C
I
B
V
CE
= −10
V
T
a
=
25°C
Collector power dissipation P
C
(mW)
200
−1
000
Collector current I
C
(mA)
160
−800
I
B
=
−10
mA
−9
mA
−8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
mA
120
−600
80
−400
40
−200
0
0
0
40
80
120
160
Collector current
I
C
(mA)
−600
−500
−400
−300
−200
−100
0
−2
−4
−6
−8
−10
0
–2
–4
–6
–8
–10
–12
0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage
V
CE(sat)
(V)
−10
V
BE(sat)
I
C
−100
h
FE
I
C
600
V
CE
= −10
V
Base-emitter saturation voltage
V
BE(sat)
(V)
I
C
/
I
B
=
10
I
C
/
I
B
=
10
−1
T
a
=75°C
−25°C
−10
Forward current transfer ratio h
FE
500
400
−
0.1
25°C
25°C
−1
T
a
= −25°C
75°C
300
T
a
=
75°C
200
25°C
−25°C
−
0.01
−
0.1
100
−
0.001
−1
−10
−100
−1
000
−
0.01
−1
−10
−100
−1
000
0
−
0.01
−
0.1
−1
−10
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(A)
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
240
V
CB
= −10
V
T
a
=
25°C
24
C
ob
V
CB
Collector-emitter voltage
(V)
V
(Resistor between B and E)
CER
I
E
=
0
f
=
1 MHz
T
a
=
25°C
−120
V
CER
R
BE
I
C
= −2
mA
T
a
=
25°C
Transition frequency f
T
(MHz)
200
20
−100
160
16
−80
120
12
−60
2SB0710A
−40
2SB0710
−20
80
8
40
4
0
1
10
100
0
−1
−10
−100
0
1
10
100
1 000
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
2
SJC00048CED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
