2SB0643, 2SB0644
P
C
T
a
800
I
C
V
CE
−800
−700
T
a
=
25°C
I
B
= −10
mA
−9
mA
−8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
mA
−800
−700
I
C
I
B
V
CE
= −10
V
T
a
=
25°C
Collector power dissipation P
C
(mW)
700
600
500
400
300
200
100
0
Collector current I
C
(mA)
−600
−500
−400
−300
−200
−100
0
Collector current I
C
(mA)
−600
−500
−400
−300
−200
−100
0
−2
−4
−6
−8
−10
0
20
40
60
80 100 120 140 160
0
−4
−8
−12
−16
−20
0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
V
BE(sat)
I
C
−100
h
FE
I
C
600
V
CE
= −10
V
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
I
C
/ I
B
=
10
−10
−10
Forward current transfer ratio h
FE
500
400
25°C
−1
−1
T
a
=
75°C
25°C
−25°C
T
a
= −25°C
75°C
300
T
a
=
75°C
200
25°C
−25°C
−
0.1
−
0.1
100
−
0.01
−
0.01
−
0.1
−1
−10
−
0.01
−
0.01
−
0.1
−1
−10
0
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
V
CB
= −10
V
T
a
=
25°C
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
24
I
E
=
0
f
=
1 MHz
T
a
=
25°C
10
4
I
CEO
T
a
V
CE
= −10
V
240
Transition frequency f
T
(MHz)
200
20
10
3
120
12
I
CEO
(T
a
)
I
CEO
(T
a
=
25°C)
−10
−100
160
16
10
2
80
8
10
4
40
0
1
10
100
0
−1
1
0
40
80
120
160
200
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Ambient temperature T
a
(
°C
)
2
SJC00046CED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
