2SA0963
P
C
T
a
12
−4.0
−3.5
10
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
T
C
=
25°C
I
B
= −40
mA
−35
mA
−30
mA
−25
mA
−20
mA
−2.0
−1.5
−15
mA
−10
mA
−5
mA
V
CE(sat)
I
C
−10
I
C
/ I
B
=
10
Collector power dissipation P
C
(W)
8
Collector current I
C
(A)
−3.0
−2.5
−1
6
T
C
=
100°C
25°C
−25°C
4
−
1.0
−
0.5
0
−
0.1
2
0
0
40
80
120
160
200
0
−2
−4
−6
−8
−10
−
0.01
−
0.01
−
0.1
−1
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
−10
I
C
/ I
B
=
10
1 000
h
FE
I
C
V
CE
= −5
V
T
C
=
100°C
25°C
f
T
I
E
240
V
CB
= −5
V
f
=
200 MHz
T
C
=
25°C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
200
−1
T
C
= −25°C
100°C
25°C
100
−25°C
160
120
−
0.1
10
80
40
−
0.01
−
0.01
−
0.1
−1
1
−
0.01
−
0.1
−1
0
0.01
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(A)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
140
120
100
80
60
40
20
0
−1
V
CER
R
BE
Collector-emitter voltage
(V)
V
(Resistor between B and E)
CER
I
E
=
0
f
=
1 MHz
T
C
=
25°C
−60
T
C
=
25°C
1 000
I
CEO
T
a
V
CE
= −12
V
−50
−30
−20
I
CEO
(T
a
)
I
CEO
(T
a
=
25°C)
−40
100
10
−10
−10
−100
0
0.001
1
0.01
0.1
1
10
0
20
40
60
80
100
120
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
Ambient temperature T
a
(°C)
2
SJD00006BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
