2SA0886
P
C
T
a
1.6
–4.0
–3.5
I
C
V
CE
T
C
=25˚C
I
B
=–40mA
–35mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
–10
Collector power dissipation P
C
(W)
Collector current I
C
(A)
1.2
–3.0
–2.5
–30mA
–25mA
–20mA
–1
0.8
–2.0
–15mA
–1.5
–1.0
–0.5
–10mA
–5mA
T
C
=100˚C
–0.1
0.4
25˚C
–25˚C
0
0
40
80
120
160
0
0
–2
–4
–6
–8
–10
–0.01
–0.01
–0.1
–1
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
h
FE
I
C
240
V
CE
=–5V
f
T
I
E
V
CB
=–5V
f=200MHz
T
C
=25˚C
–10
1000
Forward current transfer ratio h
FE
T
C
=100˚C
25˚C
Transition frequency f
T
(MHz)
200
160
–1
T
C
=–25˚C
100˚C
25˚C
100
–25˚C
120
–0.1
10
80
40
–0.01
–0.01
–0.1
–1
1
–0.01
–0.1
–1
0
0.01
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(A)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
–60
V
CER
R
BE
1000
T
C
=25˚C
I
CEO
T
a
V
CE
=–12V
140
120
100
80
60
40
20
0
–1
Collector-emitter voltage
(V)
(Resistor between B and E) V
CER
I
E
=0
f=1MHz
T
C
=25˚C
–50
–30
I
CEO
(T
a
)
I
CEO
(T
a
=
25°C)
–40
100
–20
10
–10
–10
–100
0
0.001
1
0.01
0.1
1
10
0
20
40
60
80
100
120
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
Ambient temperature T
a
(°C)
2
SJD00003BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
