Transistors
2SA0879
(2SA879)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1573
■
Features
•
High collector-emitter voltage (Base open) V
CEO
0.7
+0.3
–0.2
0.7
±0.1
5.9
±0.2
4.9
±0.2
Unit: mm
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−250
−200
−5
−70
−100
1
150
−55
to
+150
Unit
V
V
V
mA
mA
W
°C
°C
1 2 3
0.45
+0.2
–0.1
(1.27)
13.5
±0.5
0.45
+0.2
–0.1
(1.27)
8.6
±0.2
2.54
±0.15
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −100 µA,
I
B
=
0
I
E
= −1 µA,
I
C
=
0
V
CE
= −10
V, I
C
= −5
mA
I
C
= −50
mA, I
B
= −5
mA
V
CB
= −10
V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
50
80
5
10
Min
−200
−5
60
220
−1.5
Typ
Max
Unit
V
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
60 to 150
R
100 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00006BED
(3.2)
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
