2SA0794, 2SA0794A
P
C
T
a
1.6
−1.2
I
C
V
CE
T
C
=
25°C
−18
mA I
B
= −20
mA
−16
mA
−14
mA
−12
mA
−10
mA
−8
mA
−6
mA
−4
mA
−2
mA
I
C
I
B
−1.2
V
CE
= −10
V
T
C
=
25°C
Collector power dissipation P
C
(W)
−1.0
−1.0
Collector current I
C
(A)
−
0.8
0.8
−
0.6
−
0.4
0.4
−
0.2
0
0
40
80
120
160
0
Collector current I
C
(A)
1.2
−
0.8
−
0.6
−
0.4
−
0.2
0
−2
−4
−6
−8
−10
−12
0
0
−2
−4
−6
−8 −10 −12 −14
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
I
C
V
BE
V
CE
= −10
V
T
a
=
125°C
75°C
−25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
V
BE(sat)
I
C
I
C
/ I
B
=
10
−
0.6
−
0.5
Collector current I
C
(A)
−1
−1
T
C
= −25°C
100°C
25°C
−
0.4
−
0.3
T
C
=
100°C
25°C
−25°C
−
0.2
−
0.1
−
0.1
−
0.1
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
−
0.01
−
0.01
−
0.1
−1
−
0.01
−
0.01
−
0.1
−1
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
Collector current I
C
(A)
h
FE
I
C
200
V
CE
= −10
V
f
T
I
E
V
CB
= −10
V
f
=
200 MHz
T
C
=
25°C
160
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
50
I
E
=
0
f
=
1 MHz
T
C
=
25°C
40
Forward current transfer ratio h
FE
1 000
Transition frequency f
T
(MHz)
T
C
=
100°C
25°C
100
−25°C
120
30
80
20
40
10
10
−
0.01
−
0.1
−1
0
1
10
100
0
−1
−10
−100
Collector current I
C
(A)
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
2
SJD00001BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
