Transistor
2SA777
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1509
5.9±0.2
Unit: mm
4.9±0.2
q
q
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–80
–80
–5
–1
– 0.5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
0.45
–0.1
1.27
1.27
+0.2
13.5±0.5
s
Absolute Maximum Ratings
(Ta=25˚C)
2.54±0.15
0.7
–0.2
+0.3
High collector to emitter voltage V
CEO
.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
0.7±0.1
8.6±0.2
s
Features
0.45
–0.1
+0.2
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –100µA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 100MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–80
–80
–5
90
50
100
– 0.2
– 0.85
120
11
20
– 0.4
–1.2
V
V
MHz
pF
220
min
typ
max
– 0.1
Unit
µA
V
V
V
*
h
FE1
Rank classification
Q
90 ~ 155
R
130 ~ 220
Rank
h
FE1
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
