Transistor
P
C
— Ta
800
12
Ta=25˚C
700
10
–700
2SA719, 2SA720
I
C
— V
CE
–800
V
CE
=–10V
Ta=25˚C
I
C
— I
B
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
8
I
B
=–1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
6
4
2
– 0.1mA
0
0
2
4
6
8
10
12
–100
0
0
–2
–4
–6
–8
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
–600
–500
–400
–300
–200
Base current I
B
(mA)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
–3
–1
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–100
–30
–10
–3
–1
Ta=–25˚C
75˚C
I
C
/I
B
=10
600
h
FE
— I
C
V
CE
=–10V
Forward current transfer ratio h
FE
500
400
– 0.3
– 0.1
– 0.03
– 0.01
25˚C
Ta=75˚C
25˚C
300
Ta=75˚C
200
25˚C
–25˚C
100
–25˚C
– 0.3
– 0.1
– 0.03
– 0.01
–1
– 0.003
– 0.001
–1
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(A)
f
T
— I
E
240
50
C
ob
— V
CB
–120
V
CER
— R
BE
Collector to emitter voltage V
CER
(V)
I
E
=0
f=1MHz
Ta=25˚C
I
C
=–2mA
Ta=25˚C
Collector output capacitance C
ob
(pF)
V
CB
=–10V
Ta=25˚C
45
40
35
30
25
20
15
10
5
0
–1
Transition frequency f
T
(MHz)
200
–100
160
–80
120
–60
2SA720
–40
2SA719
–20
80
40
0
1
3
10
30
100
0
–3
–10
–30
–100
1
3
10
30
100
300
1000
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Base to emitter resistance R
BE
(kΩ)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
