Transistor
P
C
— Ta
1.2
–1.5
Ta=25˚C
2SA683, 2SA684
I
C
— V
CE
–1.2
V
CE
=–10V
Ta=25˚C
–1.0
I
C
— I
B
Collector power dissipation P
C
(W)
1.0
–1.25
–9mA
–1
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0.8
0.6
– 0.75
0.4
– 0.5
0.2
– 0.25
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
Collector current I
C
(mA)
I
B
=–10mA
Collector current I
C
(A)
– 0.8
– 0.6
– 0.4
– 0.2
0
0
–2
–4
–6
–8
–10
–12
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–100
–30
–10
–3
–1
Ta=–25˚C
75˚C
25˚C
I
C
/I
B
=10
–600
h
FE
— I
C
V
CE
=–10V
Forward current transfer ratio h
FE
–500
–400
Ta=75˚C
–300
25˚C
–25˚C
– 0.3
– 0.1
– 0.03
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–200
–100
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
— I
E
200
180
C
ob
— V
CB
50
–120
V
CER
— R
BE
Collector to emitter voltage V
CER
(V)
I
E
=0
f=1MHz
Ta=25˚C
I
C
=–10mA
Ta=25˚C
Collector output capacitance C
ob
(pF)
V
CB
=–10V
Ta=25˚C
45
40
35
30
25
20
15
10
5
0
–1
Transition frequency f
T
(MHz)
160
140
120
100
80
60
40
20
0
1
3
10
30
100
–100
–80
–60
2SA684
–40
2SA683
–20
–3
–10
–30
–100
0
0.1
0.3
1
3
10
30
100
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Base to emitter resistance R
BE
(kΩ)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
