Power Transistors
2SA2140
Silicon PNP epitaxial planar type
Unit: mm
For power amplification
For TV VM circuit
■
Features
•
Satisfactory linearity of forward current transfer ratio h
FE
•
High transition frequency (f
T
)
•
Full-pack package which can be installed to the heat sink with one
screw.
15.0
±0.5
9.9
±0.3
3.0
±0.5
4.6
±0.2
2.9
±0.2
φ
3.2
±0.1
13.7
±0.2
4.2
±0.2
Solder Dip
1.4
±0.2
1.6
±0.2
0.8
±0.1
2.6
±0.1
0.55
±0.15
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
−180
−180
−6
−1.5
−3
20
2.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
2.54
±0.30
5.08
±0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
Symbol
V
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
I
C
= −10
mA, I
B
=
0
V
CB
= −180
V, I
E
=
0
V
EB
= −6
V, I
C
=
0
V
CE
=
−5
V, I
C
=
−
0.1 A
I
C
= −1
A, I
B
= −
0.1 A
V
CE
= −10
V, I
C
= −
0.2 A, f
=
10 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
I
C
= −
0.4 A, Resistance loaded
I
B1
=
0.04 A, I
B2
= −
0.04 A
V
CC
=
100 V
100
30
0.1
1.0
0.1
60
Min
−180
−100
−100
240
−
0.5
Typ
Max
Unit
V
µA
µA
V
MHz
pF
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
60 to 140
P
120 to 240
Publication date: July 2004
SJD00316AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
