This product complies with the RoHS Directive (EU 2002/95/EC).
Powor Transistors
2SA2110
Silicon PNP epitaxial planar type
For low frequency power amplification
Complementary to 2SC2590
Features
Extremely satisfactory linearity of the forward current transfer ratio h
FE
High transfer ratio f
T
Makes up a complementary pair with 2SC2590, which is optimum for the pre-
driver stage of a 40 W to 60 W output amplifier.
Package
Code
TO-126B-A1
Name
Pin
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector power dissipation
T
stg
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
*1
Symbol
V
CEO
V
EBO
h
FE2
h
FE1 *2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
Collector output capacitance
(Common base, input open circuited)
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
90 to 160
R
120 to 220
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Rating
–120
–120
–5
–1
– 0.5
1.2
Unit
V
V
V
A
A
W
150
°C
°C
–55 to +150
Conditions
Min
–5
90
50
Typ
Max
I
C
= –100
mA,
I
B
= 0
I
E
= –10
mA,
I
C
= 0
–120
V
CE
= –10 V, I
C
= –150 mA
V
CE
= –5 V, I
C
= –500 mA
220
100
I
C
= –300 mA, I
B
= –30 mA
I
C
= –300 mA, I
B
= –30 mA
–1.0
–1.2
V
CB
= –10 V, I
E
= 50 mA, f = 200 MHz
V
CB
= –10 V, I
E
= 0, f = 1 MHz
200
20
30
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Publication date : October 2008
Unit
V
V
V
V
MHz
pF
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
