This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2084
Silicon PNP epitaxial planar type
For general amplification
0.40
+0.10
–0.05
Unit: mm
0.16
+0.10
–0.06
M
Di ain
sc te
on na
tin nc
ue e/
d
■
Features
3
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CEO
V
EBO
h
FE
ue
Collector-emitter voltage (Base open)
Forward current transfer ratio
*
tin
Emitter-base voltage (Collector open)
Collector-emitter saturation voltage
V
CE(sat)
C
ob
f
T
te
na
nc
e/
Collector output capacitance
(Common base, input open circuited)
Transition frequency
M
ain
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
P
30 to 100
Q
Publication date: January 2003
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1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
•
High collector-emitter voltage (Base open) V
CEO
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
1.50
+0.25
–0.05
2.8
+0.2
–0.3
Rating
−300
−300
−5
−70
200
150
Unit
V
V
10˚
1.1
+0.2
–0.1
(0.65)
V
1.1
+0.3
–0.1
mA
−100
mA
°C
mW
°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
−55
to
+150
Marking Symbol: 7N
Conditions
Min
−5
30
Typ
0 to 0.1
Max
Unit
V
I
C
= −100 µA,
I
B
=
0
I
E
= −1 µA,
, I
C
=
0
−300
V
sc
on
V
CE
= −10
V, I
C
= −5
mA
I
C
= −10
mA, I
B
= −1
mA
150
V
−
0.6
Di
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
7
pF
V
CB
= −10
V, I
E
=
10 mA, f
=
200 MHz
50
MHz
60 to 150
0.4
±0.2
5˚
SJC00286AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
