Transistors
2SA2078
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5846
■
Features
•
High forward current transfer ratio h
FE
•
SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
0.23
+0.05
–0.02
1
2
0.15 min.
(0.40) (0.40)
0.80
±0.05
1.20
±0.05
5˚
0.33
+0.05
–0.02
3
0.15 min.
0.80
±0.05
1.20
±0.05
Unit: mm
0.10
+0.05
–0.02
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−60
−50
−7
−100
−200
100
125
−55
to
+125
Unit
V
V
V
mA
mA
mW
°C
°C
0 to 0.01
0.52
±0.03
5˚
1 : Base
2 : Emitter
3 : Collector
SSSMini3-F1 Package
Marking Symbol: 7H
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −100 µA,
I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
V
CE
= −10
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
180
−
0.2
80
2.2
Min
−60
−50
−7
−
0.1
−100
390
−
0.5
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15 max.
Publication date: August 2003
SJC00302AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
